Defect Donor and Acceptor in GaN
نویسندگان
چکیده
منابع مشابه
Acceptor binding energies in GaN and AlN
We employ effective-mass theory for degenerate hole bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C, and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 636 Rashba-Sheka-Pikus and the Luttinger-Kohn matrix Hamiltonians for wurtzite ~WZ! and zinc-blende ~ZB! crystal phases, respectively. An analytic representation for the acceptor pse...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1997
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.79.2273